SCT3080ALHR Series

650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Qualification	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Grade	Package / Case	Supplier Device Package
Rohm Semiconductor SCT3080ALHRC11	18 V	571 pF	175 °C	AEC-Q101	650 V	104 mOhm	48 nC	5.6 V	Through Hole	N-Channel	30 A	134 W	Automotive	TO-247-3	TO-247N

Catalog

650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT3080ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.