SCT3105 Series

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Grade
Rohm Semiconductor SCT3105KW7TL	TO-263-7	574 pF	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	175 °C	23 A	51 nC	5.6 V	Surface Mount	N-Channel	1.2 kV	137 mOhm
Rohm Semiconductor SCT3105KRHRC15	TO-247-4L	574 pF	TO-247-4	175 °C	24 A	51 nC	5.6 V	Through Hole	N-Channel	1.2 kV	137 mOhm	AEC-Q101	18 V	MOSFET (Metal Oxide)	134 W	Automotive
Rohm Semiconductor SCT3105KRC15	TO-247-4L	574 pF	TO-247-4	175 °C	24 A	51 nC	5.6 V	Through Hole	N-Channel	1.2 kV	137 mOhm		18 V	SiC (Silicon Carbide Junction Transistor)	134 W
Rohm Semiconductor SCT3105KRC14	TO-247-4L	574 pF	TO-247-4	175 °C	24 A	51 nC	5.6 V	Through Hole	N-Channel	1.2 kV	137 mOhm		18 V		134 W
Rohm Semiconductor SCT3105KLHRC11	TO-247N	574 pF	TO-247-3	175 °C	24 A	51 nC	5.6 V	Through Hole	N-Channel	1.2 kV	137 mOhm	AEC-Q101	18 V		134 W	Automotive

Catalog

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

SCT3105KR is anSiC MOSFETthat features a trench gate structure optimized forelectric vehicle charging stations,solar power inverters, and server power supplies requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.