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Rohm Semiconductor

Series List(8390)

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Series	Category	# Parts	Status	Description

Standalone parts(17468)

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Part	Category	Description
Rohm Semiconductor SLR-322MCT32	Optoelectronics	LED GREEN CLEAR T-1 T/H
Rohm Semiconductor MCR10EZPF8252Unknown	Resistors	RES SMD 82.5K OHM 1% 1/8W 0805
Rohm Semiconductor KTR18EZPJ333	Resistors	RES SMD 33K OHM 5% 1/4W 1206
Rohm Semiconductor ESR03EZPJ914	Resistors	RES 910K OHM 5% 1/4W 0603
Rohm Semiconductor MCR03EZPFX2260Unknown	Resistors	RES SMD 226 OHM 1% 1/10W 0603
Rohm Semiconductor ESR10EZPF4121NRND	Resistors	RES 4.12K OHM 1% 2/5W 0805
Rohm Semiconductor MCR25JZHFLR270Unknown	Resistors	RES 0.27 OHM 1% 1/2W 1210
Rohm Semiconductor ESR10EZPF4R32NRND	Resistors	RES 4.32 OHM 1% 1/2W 0805
Rohm Semiconductor MCR18EZPJ1R6Unknown	Resistors	RES SMD 1.6 OHM 5% 1/4W 1206
Rohm Semiconductor ESR03EZPF2403	Resistors	RES, 240K, 1%, 0.25W, THICK FILM, 0603 ROHS COMPLIANT: YES

Series	Category	# Parts	Status	Description

SCT3022ALHR650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT3022ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3022KL1200V, 95A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET	Transistors	1	Active	SCT3022KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3022KLHR1200V, 95A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT3022KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3030650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single	7	Active	SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3030ALHR650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Transistors	1	Active	AEC-Q101 qualified automotive grade product. SCT3030ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT30401200V, 55A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single	6	Active	SCT3040KR is anSiC MOSFETfeaturing a trench gate structure optimized for a number of applications, including server power supplies,solar power inverters, switch-mode power supplies, motor drives, induction heating, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3040KL1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET	FETs, MOSFETs	1	Active	SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3060650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	5	Active	SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3060AL650V, 39A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET	FETs, MOSFETs	1	Active	SCT3060AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3080650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single	9	Active	SCT3080KR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.