| Single Diodes | 1 | Obsolete | |
SCT20801200V, 40A, THD, Silicon-carbide (SiC) MOSFET | Discrete Semiconductor Products | 1 | Active | This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT2080KEHR1200V, 40A, THD, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 1 | Active | AEC-Q101 qualified automotive grade product. SCT2080KEHR is an SiC (Silicon Carbide) MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
| Single FETs, MOSFETs | 1 | Obsolete | |
SCT21601200V, 22A, THD, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 2 | Active | This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product. |
SCT22801200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 2 | Active | This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product. |
SCT24501200V, 10A, THD, Silicon-carbide (SiC) MOSFET | Discrete Semiconductor Products | 2 | Active | This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT2H12NWB1700V, 3.9A, 7-pin SMD, Silicon-carbide (SiC) MOSFET | Single FETs, MOSFETs | 1 | Active | SCT2H12NWB is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT3017650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | FETs, MOSFETs | 2 | Active | AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT3022AL650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | Transistors | 1 | Active | SCT3022AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |