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ON Semiconductor
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FDMS8320LDCN-Channel Dual Cool<sup>TM</sup> 56 Power Trench<sup>®</sup> MOSFET 40V, 192A, 1.1mΩ | Single FETs, MOSFETs | 3 | Active | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. |
FDMS8333LN-Channel PowerTrench<sup>®</sup> MOSFET 40V, 76A, 3.1mΩ | FETs, MOSFETs | 1 | Active | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance. |
FDMS8350LET40N-Channel PowerTrench<sup>®</sup> MOSFET 40V, 300A, 0.85mΩ | Single | 1 | Obsolete | This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
FDMS8460N-Channel Power Trench<sup>®</sup> MOSFET 40V, 49A, 2.2mΩ | Transistors | 1 | Active | This N-Channel MOSFET is produced using an advanced Power Trench®process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
FDMS8558SDCN-Channel PowerTrench<sup>®</sup> SyncFET™ 25V, 60A, 2.8mΩ | Discrete Semiconductor Products | 5 | Active | This N-Channel SyncFET™ is produced using ON Semiconductor Semiconductor’s advanced PowerTrench®process. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. |
FDMS86102LZN-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 100V, 22A, 25mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel logic Level MOSFETs are produced using an advanced PowerTrench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. |
FDMS86150AN-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ | Discrete Semiconductor Products | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process thant hasbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
FDMS86202ET120N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 120V, 102A, 7.2mΩ | Discrete Semiconductor Products | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. |
FDMS86255ET150N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 150V, 63A, 12.4mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. |
FDMS86350ET80N-Channel PowerTrench<sup>®</sup> MOSFET 80V, 198A, 2.4mΩ | Discrete Semiconductor Products | 1 | Active | This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |