FDMS9408L_F085N-Channel Logic Level PowerTrench<sup>®</sup> MOSFET 40V, 80A, 1.7mΩ | Single | 4 | Obsolete | N-Channel Logic Level PowerTrench®MOSFET40 V, 80 A, 1.7 mΩ |
FDMS9600SDual N-Channel PowerTrench<sup>®</sup> MOSFET 30V | FETs, MOSFETs | 1 | Obsolete | This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™. |
FDMS9620SDual N-Channel PowerTrench<sup>®</sup> MOSFET 30V | FET, MOSFET Arrays | 1 | Active | This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™. |
FDMT800100DCN-Channel Dual Cool™ 88 PowerTrench<sup>®</sup> MOSFET 100V, 162A, 2.95mΩ | FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual CoolTMpackage technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. |
FDMT800120DCN-Channel Dual Cool<sup>TM</sup> 88 PowerTrench<sup>®</sup> MOSFET 120V, 128A, 4.2mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual CoolTMpackage technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. |
FDMT800150DCN-Channel Dual Cool<sup>TM</sup> 88 PowerTrench<sup>®</sup> MOSFET 150V, 99A, 6.5mΩ | Transistors | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual CoolTMpackage technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. |
| Transistors | 1 | Active | |
| Discrete Semiconductor Products | 1 | Active | |
FDN028N20N-Channel PowerTrench<sup>®</sup> MOSFET 20V, 6.1A, 28mΩ | Transistors | 1 | Active | This N-Channel PowerTrench MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. |
FDN302PP-Channel 2.5V Specified PowerTrench<sup>®</sup> MOSFET -20V, -2.4A, 55mΩ | FETs, MOSFETs | 1 | Active | This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). |