FDMS86102LZ Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 22A, 25mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 22A, 25mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Technology	Mounting Type
ON Semiconductor FDMS86102LZ	4.5 V 10 V	-55 °C	150 °C	2.5 W 69 W	20 V	8-PowerTDFN	1305 pF	2.5 V	22 nC	100 V	8-PQFN (5x6)	25 mOhm	N-Channel	MOSFET (Metal Oxide)	Surface Mount

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 22A, 25mΩ

Key Features

• Max rDS(on)= 25 mΩ at VGS= 10 V, ID= 7 A

• Max rDS(on)= 37 mΩ at VGS= 4.5 V, ID= 5.8 A

• HBM ESD protection level > 6 KV typical(Note 4)

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel logic Level MOSFETs are produced using an advanced PowerTrench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.