FDMS8333L Series

N-Channel PowerTrench® MOSFET 40V, 76A, 3.1mΩ

Catalog

N-Channel PowerTrench® MOSFET 40V, 76A, 3.1mΩ

Part	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max)
ON Semiconductor FDMS8333L	MOSFET (Metal Oxide)	3.1 mOhm	Surface Mount	8-PQFN (5x6)	40 V	4.5 V 10 V	64 nC	3 V	22 A 76 A	20 V	8-PowerTDFN	4545 pF	-55 °C	150 °C	N-Channel	2.5 W 69 W

Catalog

N-Channel PowerTrench® MOSFET 40V, 76A, 3.1mΩ

Key Features

• Max RDS(on)= 3.1 mΩ at VGS= 10 V, ID= 22 A

• Max RDS(on)= 4.3 mΩ at VGS= 4.5 V, ID= 19 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.