FDMS8460 Series

N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ

Catalog

N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMS8460	7205 pF	MOSFET (Metal Oxide)	8-PowerTDFN	-55 °C	150 °C	20 V	N-Channel	Surface Mount	110 nC	2.5 W	104 W	3 V	40 V	2.2 mOhm	8-PQFN (5x6)	25 A 49 A	4.5 V 10 V

Catalog

N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ

Key Features

• Max rDS(on)= 2.2mΩ at VGS= 10V, ID= 25A

• Max rDS(on)= 3.0mΩ at VGS= 4.5V, ID= 21.7A

• Advanced Package and Silicon combination for low rDS(on)

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.