FDMS86255ET150 Series

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 63A, 12.4mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 63A, 12.4mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMS86255ET150	-55 °C	175 ░C	150 V	3.3 W 136 W	63 nC	4 V	Surface Mount	8-PowerTDFN	4480 pF	N-Channel	8-PQFN (5x6)	10 A 63 A	MOSFET (Metal Oxide)	20 V	6 V 10 V

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 63A, 12.4mΩ

Key Features

• Extended TJrating to 175°C

• Shielded Gate MOSFET Technology

• Max rDS(on)= 12.4 mΩ at VGS= 10 V, ID= 10 A

• Max rDS(on)= 15.5 mΩ at VGS= 6 V, ID= 8 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.