FDMS86350ET80 Series

N-Channel PowerTrench® MOSFET 80V, 198A, 2.4mΩ

Catalog

N-Channel PowerTrench® MOSFET 80V, 198A, 2.4mΩ

Part	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMS86350ET80	Surface Mount	8-PQFN (5x6)	3.3 W 187 W	80 V	N-Channel	8-PowerTDFN	155 nC	-55 °C	175 ░C	4.5 V	2.4 mOhm	MOSFET (Metal Oxide)	8030 pF	8 V 10 V	20 V	25 A 198 A

Catalog

N-Channel PowerTrench® MOSFET 80V, 198A, 2.4mΩ

Key Features

• Extended TJrating to 175°C

• Max rDS(on)= 2.4 mΩ at VGS= 10 V, ID= 25 A

• Max rDS(on)= 3.2 mΩ at VGS= 8 V, ID= 22 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.