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ON Semiconductor
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FDMS7658ASN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 176A, 1.9mΩ | Single FETs, MOSFETs | 1 | Obsolete | The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. |
FDMS7672ASN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 42A, 4mΩ | Discrete Semiconductor Products | 1 | Obsolete | The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. |
FDMS7692AN-Channel Power Trench<sup>®</sup> MOSFET 30V, 26A, 5.5mΩ | FET, MOSFET Arrays | 9 | Active | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. |
FDMS7700SDual N-Channel PowerTrench<sup>®</sup> MOSFET 30V | FETs, MOSFETs | 1 | Obsolete | This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency. |
FDMS8018N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 175A, 1.8mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. |
FDMS8023SN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 49A, 2.4mΩ | Single FETs, MOSFETs | 2 | Active | The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode. |
FDMS8025SN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 49A, 2.8mΩ | FET, MOSFET Arrays | 3 | Active | This part number is not recommended for new designs. Please apply NTMFS4C024NT1G as a replacement. The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode. |
FDMS8026SN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 22A, 4.3mΩ | Transistors | 2 | Active | The FDMS8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode. |
FDMS8027SN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 22A, 5.0mΩ | Transistors | 2 | Active | The FDMS8027S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. |
FDMS8050ET30N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 423A, 0.65mΩ | Transistors | 1 | NRND | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). |
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |