FDMS8320LDC Series

N-Channel Dual CoolTM 56 Power Trench® MOSFET 40V, 192A, 1.1mΩ

Catalog

N-Channel Dual CoolTM 56 Power Trench® MOSFET 40V, 192A, 1.1mΩ

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)
ON Semiconductor FDMS8320LDC	1.1 mOhm	20 V	11635 pF	Surface Mount	3 V	8-PowerTDFN	3.2 W 125 W	170 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	40 V	4.5 V 10 V	8-PQFN (5x6)	N-Channel	44 A 130 A
ON Semiconductor FDMS8320LDC
ON Semiconductor FDMS8320L	1.1 mOhm	20 V	11110 pF	Surface Mount	3 V	8-PowerTDFN		170 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	40 V	4.5 V 10 V	8-PQFN (5x6)	N-Channel	36 A 100 A	2.5 W	104 W

Catalog

N-Channel Dual CoolTM 56 Power Trench® MOSFET 40V, 192A, 1.1mΩ

Key Features

• Max rDS(on)= 1.1 mΩ at VGS= 10 V, ID= 44 A

• Max rDS(on)= 1.5 mΩ at VGS= 4.5 V, ID= 37 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.