FDMS86202ET120 Series

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mΩ

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMS86202ET120	7.2 mOhm	8-PQFN (5x6)	4 V	13.5 A 102 A	3.3 W 187 W	Surface Mount	120 V	N-Channel	4585 pF	8-PowerTDFN	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	6 V 10 V	64 nC

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mΩ

Key Features

• Extended TJrating to 175°C

• Shielded Gate MOSFET Technology

• Max rDS(on)= 7.2 mΩ at VGS= 10 V, ID= 13.5 A

• Max rDS(on)= 10.3 mΩ at VGS= 6 V, ID= 11.5 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.