FDMS86150A Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ

Part	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology
ON Semiconductor FDMS86150A	8-PowerTDFN	4.85 mOhm	4 V	100 V	20 V	Surface Mount	2.7 W 113 W	16 A 60 A	Power56	N-Channel	6 V 10 V	4665 pF	66 nC	-55 °C	150 °C	MOSFET (Metal Oxide)

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 4.85 mΩ at VGS= 10 V, ID= 16 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process thant hasbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance.