FDMS8558SDC Series

N-Channel PowerTrench® SyncFET™ 25V, 60A, 2.8mΩ

Catalog

N-Channel PowerTrench® SyncFET™ 25V, 60A, 2.8mΩ

Part	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMS8570SDC	8-PowerTDFN	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	2825 pF	2.8 mOhm	3.3 W 59 W	42 nC	2.2 V	-55 °C	150 °C	Schottky Diode (Body)	25 V	12 V	Dual Cool™56	Surface Mount
ON Semiconductor FDMS8570S	8-PowerTDFN	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	2825 pF		2.5 W 48 W	425 nC	2.2 V	-55 °C	150 °C		25 V	12 V	8-PQFN (5x6)	Surface Mount	24 A	60 A
ON Semiconductor FDMS8570SDC	8-PowerTDFN	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	2825 pF	2.8 mOhm	3.3 W 59 W	42 nC	2.2 V	-55 °C	150 °C	Schottky Diode (Body)	25 V	12 V	8-PQFN (5x6)	Surface Mount
ON Semiconductor FDMS8558SDC
ON Semiconductor FDMS8570S	8-PowerTDFN	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	2825 pF		2.5 W 48 W	425 nC	2.2 V	-55 °C	150 °C		25 V	12 V	8-PQFN (5x6)	Surface Mount	24 A	60 A

Catalog

N-Channel PowerTrench® SyncFET™ 25V, 60A, 2.8mΩ

Key Features

• Dual Cool™ PQFN package

• Maximum RDS(on)= 2.8 mΩ at VGS= 10 V, ID= 28 A

• Maximum RDS(on)= 3.3 mΩ at VGS= 4.5 V, ID= 25 A

• High-Performance Technology for Extremely Low RDS(on)

• SyncFET™ Schottky Body Diode

• RoHS Compliant

Description

This N-Channel SyncFET™ is produced using ON Semiconductor Semiconductor’s advanced PowerTrench®process. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.