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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDMC7692SN-Channel Power Trench® SyncFET™ 30V, 18A, 9.3mΩ	Single	1	LTB	This FDMC7692S is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for power management and load switching applications common in notebook computers and portable battery packs.
FDMC7696N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 12A, 11.5mΩ	Single FETs, MOSFETs	1	Obsolete	This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDMC8010Dual N-Channel Power Trench<sup>®</sup> MOSFET 40V, 12A, 10mΩ	Single FETs, MOSFETs	4	Active	This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on)is required in small spaces such as High performance VRM, POL and Oring functions.
FDMC8026SN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 21A, 4.4mΩ	Discrete Semiconductor Products	1	Obsolete	The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
FDMC8032LDual N-Channel PowerTrench<sup>®</sup> MOSFET 40V, 7A, 20mΩ	FETs, MOSFETs	1	Obsolete	This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
FDMC8097ACDual N & P-Channel PowerTrench<sup>®</sup> MOSFET 150V	Transistors	1	Active	These Dual N and P-Channel enhancement mode Power MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.
FDMC8200Dual N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 9.5mΩ and 20mΩ	FET, MOSFET Arrays	3	Active	This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
FDMC8321LDCN-Channel Power Trench<sup>®</sup> MOSFET 40V, 108A, 2.5mΩ	Transistors	2	Active	This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.
FDMC8327LN-Channel PowerTrench<sup>®</sup> MOSFET 40V, 14A, 9.7mΩ	Transistors	3	Active	This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMC8360LET40N-Channel Shielded Gate Power Trench<sup>®</sup> MOSFET 40V, 141A, 2.1mΩ	Discrete Semiconductor Products	2	Active	This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.