FDMC8010 Series

Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

Catalog

Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

Part	Rds On (Max) @ Id, Vgs	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type
ON Semiconductor FDMC8030	10 mOhm	Logic Level Gate	Surface Mount	1975 pF	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	8-Power33 (3x3)	12 A	30 nC	2 N-Channel (Dual)	2.8 V	800 mW	40 V
ON Semiconductor FDMC8010	1.3 mOhm		Surface Mount	5860 pF	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	Power33	30 A 75 A					30 V	4.5 V 10 V	2.5 V	2.4 W 54 W	94 nC	20 V	N-Channel
ON Semiconductor FDMC8010A
ON Semiconductor FDMC8010A

Catalog

Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

Key Features

• Max RDS(on)= 1.3 mΩ at VGS= 10 V, ID= 30 A

• Max RDS(on)= 1.8 mΩ at VGS= 4.5 V, ID= 25 A

• High performance technology for extremely low RDS(on)

• Termination is Lead-free and RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on)is required in small spaces such as High performance VRM, POL and Oring functions.