FDMC8026S Series

N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMC8026S	20 V	4.4 mOhm	3 V	19 A 21 A	52 nC	N-Channel	3165 pF	8-MLP (3.3x3.3)	30 V	Surface Mount	8-PowerWDFN	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 W 36 W	-55 °C	150 °C

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ

Key Features

• Max rDS(on)= 4.4 mΩ at VGS= 10 V, ID= 19 A

• Max rDS(on)= 5.2 mΩ at VGS= 4.5 V, ID= 17.5 A

• Advanced package and silicon combination for low rDS(on)and high efficiency

• SyncFET Schottky Body Diode

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.