FDMC7692S Series

N-Channel Power Trench® SyncFET™ 30V, 18A, 9.3mΩ

Catalog

N-Channel Power Trench® SyncFET™ 30V, 18A, 9.3mΩ

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Package / Case
ON Semiconductor FDMC7692S	3 V	1385 pF	MOSFET (Metal Oxide)	Surface Mount	12.5 A 18 A	N-Channel	-55 °C	150 °C	23 nC	30 V	2.3 W 27 W	4.5 V 10 V	9.3 mOhm	8-MLP (3.3x3.3)	20 V	8-PowerWDFN

Catalog

N-Channel Power Trench® SyncFET™ 30V, 18A, 9.3mΩ

Key Features

• Max rDS(on)= 9.3 mΩ at VGS= 10 V, ID= 12.5 A

• Max rDS(on)= 13.6 mΩ at VGS= 4.5 V, ID= 10.4 A

• High performance technology for extremely low rDS(on)

• Termination is Lead-free and RoHS Compliant

Description

This FDMC7692S is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for power management and load switching applications common in notebook computers and portable battery packs.