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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FDMC8462N-Channel Power Trench<sup>®</sup> MOSFET 40V, 20A, 5.8mΩ | Transistors | 1 | Active | This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
FDMC8588N-Channel PowerTrench<sup>®</sup> MOSFET 25V, 40A, 5.7mΩ | Discrete Semiconductor Products | 1 | Obsolete | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. |
FDMC86102LZN-Channel Shielded Gate Power Trench<sup>®</sup> MOSFET 100V, 22A, 24mΩ | Transistors | 2 | Active | This N-Channel logic Level MOSFETs are produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. |
FDMC86116LZN-Channel Power Trench<sup>®</sup> MOSFET 100V, 7.5A, 103mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S Zener has been added to enhance ESD voltage level. |
FDMC86160ET100N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 100V, 43A, 14mΩ | Single | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ultra low RDS(on)is required in small spaces such as High performance VRM, POL and orring functions. |
FDMC86260N-Channel Power Trench<sup>®</sup> MOSFET 150V, 25A, 34mΩ | Single | 1 | Active | This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
FDMC86324N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 100 V, 53 A, 8.5 mΩ | Single | 5 | Active | This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on)has been maintained to provide a sub logic-level device. |
FDMC86520LN-Channel Power Trench<sup>®</sup> MOSFET 60V, 22A, 7.9mΩ | FETs, MOSFETs | 1 | Active | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. |
FDMC86570LN-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 60V , 84A, 4.3mΩ | Transistors | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. |
FDMC8878N-Channel Power Trench<sup>®</sup> MOSFET 30V, 16.5A, 14mΩ | Discrete Semiconductor Products | 6 | Active | This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications. |