FDMC8097AC Series

Dual N & P-Channel PowerTrench® MOSFET 150V

Catalog

Dual N & P-Channel PowerTrench® MOSFET 150V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Configuration	Drain to Source Voltage (Vdss)	Mounting Type	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case
ON Semiconductor FDMC8097AC	230 pF 395 pF	155 mOhm	8-Power33 (3x3)	N and P-Channel	150 V	Surface Mount	1.9 W	2.4 A 900 mA	6.2 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	4 V	8-PowerWDFN

Catalog

Dual N & P-Channel PowerTrench® MOSFET 150V

Key Features

• Q1: N-ChannelMaxrDS(on)= 152 mΩ at VGS= 10 V, ID= 2.4 AMax rDS(on)= 212 mΩ at VGS= 6 V, ID= 2 A

• Q2: P-ChannelMax rDS(on)= 1200 mΩ at VGS= -10 V, ID= -0.9 AMax rDS(on)= 1400 mΩ at VGS= -6 V, ID= -0.8 A

• Optimised for active clamp forward converters

• RoHS Compliant

Description

These Dual N and P-Channel enhancement mode Power MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.