FDMC7696 Series

N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ

Part	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Power Dissipation (Max)	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package
ON Semiconductor FDMC7696-L701	N-Channel	30 V	4.5 V 10 V	22 nC	11.5 mOhm	12 A 20 A	Surface Mount	8-PowerWDFN	2.4 W 25 W	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	3 V	8-MLP (3.3x3.3)

Catalog

N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ

Key Features

• Max rDS(on)= 11.5 mΩ at VGS= 10 V, ID= 12 A

• Max rDS(on)= 14.5 mΩ at VGS= 4.5 V, ID= 10.0 A

• High performance technology for extremely low rDS(on)

• Termination is Lead-free and RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.