FDMC8321LDC Series

N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ

Catalog

N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMC8321L	N-Channel	-55 °C	150 °C	Surface Mount	3 V	20 V	61 nC	8-PowerTDFN	MOSFET (Metal Oxide)	2.5 mOhm	4.5 V 10 V	2.3 W 40 W	3900 pF	40 V	Power33	22 A 49 A
ON Semiconductor FDMC8321LDC	N-Channel	-55 °C	150 °C	Surface Mount	3 V	20 V		8-PowerTDFN	MOSFET (Metal Oxide)	2.5 mOhm	4.5 V 10 V	2.9 W 56 W	3965 pF	40 V	Dual Cool ™ 33	27 A 108 A	60 nC

Catalog

N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ

Key Features

• Max rDS(on)= 2.5 mΩ at VGS= 10 V, ID= 22 A

• Max rDS(on)= 4.1 mΩ at VGS= 4.5 V, ID= 18 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next Generation enhanced body diode technology, engineered for soft recovery

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.