FDMC8360LET40 Series

N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ

Catalog

N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ

Part	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor FDMC8360LET40	N-Channel	2.1 mOhm	Power33	3 V	27 A 141 A	4.5 V 10 V	20 V	Surface Mount	80 nC	40 V	5300 pF	2.8 W 75 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerWDFN
ON Semiconductor FDMC8360L	N-Channel	2.1 mOhm	Power33	3 V	27 A 80 A	4.5 V 10 V	20 V	Surface Mount	80 nC	40 V	5795 pF	2.3 W 54 W	MOSFET (Metal Oxide)	-55 °C	150 °C	8-PowerWDFN

Catalog

N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 2.1 mΩ at VGS= 10 V, ID= 27 A

• Max rDS(on)= 3.1 mΩ at VGS= 4.5 V, ID= 22 A

• High Performance Technology for Extremely Low rDS(on)

• Termination is Lead-free

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.