O
ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FDMC3020DCN-Channel Dual Cool<sup>TM</sup> 33 PowerTrench<sup>®</sup> MOSFET 30V, 40A, 6.25mΩ | Single | 1 | Obsolete | This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode |
| FET, MOSFET Arrays | 1 | Obsolete | ||
FDMC3612-L701N-Channel Power Trench<sup>®</sup> MOSFET 100V, 12A, 110mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
| Single FETs, MOSFETs | 2 | Obsolete | ||
FDMC4435BZP-Channel Power Trench<sup>®</sup> MOSFET -30V, -18A, 20mΩ | FETs, MOSFETs | 2 | Active | This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. |
FDMC510PMOSFET, Power, 20V P-Channel, MLP 3.3x3.3 | Discrete Semiconductor Products | 1 | Active | MOSFET, Power MOSFET, 20V P-Channel, 8mΩ @ 4.5V, 50A, MLP 3.3x3.3 |
FDMC5614PP-Channel PowerTrench<sup>®</sup> MOSFET -60V, -13.5A, 100mΩ | Single FETs, MOSFETs | 1 | Obsolete | This P-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). |
| Transistors | 1 | Obsolete | ||
FDMC6675BZP-Channel Power Trench<sup>®</sup> MOSFET -30V, -20A, 14.4mΩ | Transistors | 1 | NRND | This part number is not recommended for new designs. Please apply NTTFS015P03P8ZTAG as a replacement. The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on)and ESD protection. |
FDMC6686PP-Channel PowerTrench<sup>®</sup> MOSFET -20V, -56A, 4mΩ | Transistors | 1 | Obsolete | This P-Channel MOSFET is produced using an advanced PowerTrench®process that has been optimized for rDS(ON), switching performance and ruggedness. |