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Texas Instruments
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
CSD17556Q5B30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm | Discrete Semiconductor Products | 1 | Active | This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.
This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. |
CSD17559Q530-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm | Transistors | 1 | Active | This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.
This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. |
CSD17570Q5B30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm | Transistors | 1 | Active | This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.
This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications. |
CSD17571Q230-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm | Discrete Semiconductor Products | 1 | Active | This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.
This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package. |
CSD17573Q5B30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm | Transistors | 1 | Active | This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
CSD17575Q330-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm | Transistors | 2 | Active | This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
CSD17576Q5B30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm | Transistors | 1 | Active | This 30 V, 1.7 mΩ, SON 5 x 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
This 30 V, 1.7 mΩ, SON 5 x 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. |
CSD17577Q3A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm | Transistors | 3 | Active | This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications.
This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications. |
CSD17578Q3A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm | Single FETs, MOSFETs | 3 | Active | This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. |
CSD17579Q3A30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.2 mOhm | Single FETs, MOSFETs | 3 | Active | This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. |
| Part | Category | Description |
|---|---|---|
 Texas Instruments | Integrated Circuits (ICs) | BUS DRIVER, BCT/FBT SERIES |
 Texas Instruments | Integrated Circuits (ICs) | 12BIT 3.3V~3.6V 210MHZ PARALLEL VQFN-48-EP(7X7) ANALOG TO DIGITAL CONVERTERS (ADC) ROHS |
Texas Instruments | Integrated Circuits (ICs) | TMX320DRE311 179PIN UBGA 200MHZ |
 Texas Instruments TPS61040DRVTG4Unknown | Integrated Circuits (ICs) | IC LED DRV RGLTR PWM 350MA 6WSON |
 Texas Instruments LP3876ET-2.5Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 2.5V 3A TO220-5 |
 Texas Instruments LMS1585ACSX-ADJObsolete | Integrated Circuits (ICs) | IC REG LIN POS ADJ 5A DDPAK |
 Texas Instruments INA111APG4Obsolete | Integrated Circuits (ICs) | IC INST AMP 1 CIRCUIT 8DIP |
 Texas Instruments | Integrated Circuits (ICs) | AUTOMOTIVE, QUAD 36V 1.2MHZ OPERATIONAL AMPLIFIER |
 Texas Instruments OPA340NA/3KG4Unknown | Integrated Circuits (ICs) | IC OPAMP GP 1 CIRCUIT SOT23-5 |
 Texas Instruments PT5112AObsolete | Power Supplies - Board Mount | DC DC CONVERTER 8V 8W |
