CSD17575Q3 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Technology	FET Type	Power Dissipation (Max)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD17575Q3	4.5 V 10 V	Surface Mount	1.8 V	MOSFET (Metal Oxide)	N-Channel	2.8 W 108 W	8-PowerTDFN	8-VSON-CLIP (3.3x3.3)	-55 °C	150 °C	20 V	4420 pF	60 A	30 V	2.3 mOhm	30 nC
Texas Instruments CSD17575Q3T	4.5 V 10 V	Surface Mount	1.8 V	MOSFET (Metal Oxide)	N-Channel	2.8 W 108 W	8-PowerTDFN	8-VSON-CLIP (3.3x3.3)	-55 °C	150 °C	20 V	4420 pF	60 A	30 V	2.3 mOhm	30 nC

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm

Key Features

• Low Qgand QgdLow RDS(on)Low Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mmPlastic PackageLow Qgand QgdLow RDS(on)Low Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mmPlastic Package

Description

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.