CSD17559Q5 Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Texas Instruments CSD17559Q5T	8-VSON-CLIP (5x6)	100 A	9200 pF	MOSFET (Metal Oxide)	30 V	Surface Mount	N-Channel	4.5 V 10 V	20 V	-55 °C	150 °C	8-PowerTDFN	3.2 W 96 W	1.7 V	51 nC	1.15 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Key Features

• Extremely Low ResistanceUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic PackageExtremely Low ResistanceUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic Package

Description

This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.