CSD17573Q5B Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm

Part	Technology	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Texas Instruments CSD17573Q5B	MOSFET (Metal Oxide)	1.8 V	Surface Mount	9000 pF	4.5 V 10 V	1 mOhm	3.2 W 195 W	-55 °C	150 °C	100 A	20 V	8-PowerTDFN	N-Channel	30 V	64 nC	8-VSON-CLIP (5x6)

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm

Key Features

• Low Qgand QgdUltra-Low RDS(on)Low-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageLow Qgand QgdUltra-Low RDS(on)Low-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.