CSD17577Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Part	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD17577Q5A	30 V	Surface Mount	-55 °C	150 °C	20 V	N-Channel	35 nC	1.8 V	8-VSONP (5x6)	4.5 V 10 V	60 A	3 W 53 W	4.2 mOhm	MOSFET (Metal Oxide)	8-PowerTDFN	2310 pF
Texas Instruments CSD17577Q3AT	30 V	Surface Mount	-55 °C	150 °C	20 V	N-Channel	35 nC	1.8 V	8-VSONP (3x3.3)	4.5 V 10 V	35 A	2.8 W 53 W	4.8 mOhm	MOSFET (Metal Oxide)	8-PowerVDFN	2310 pF
Texas Instruments CSD17577Q5AT	30 V	Surface Mount	-55 °C	150 °C	20 V	N-Channel	35 nC	1.8 V	8-VSONP (5x6)	4.5 V 10 V	60 A	3 W 53 W	4.2 mOhm	MOSFET (Metal Oxide)	8-PowerTDFN	2310 pF

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Key Features

• Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic PackageLow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic Package

Description

This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications. This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications.