CSD17571Q2 Series

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Technology	FET Type
Texas Instruments CSD17571Q2	Surface Mount	468 pF	-55 °C	150 °C	2 V	22 A	29 mOhm	6-SON (2x2)	30 V	3.1 nC	4.5 V 10 V	2.5 W	20 V	MOSFET (Metal Oxide)	N-Channel

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Key Features

• Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 2 mm × 2 mm Plastic PackageLow Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 2 mm × 2 mm Plastic Package

Description

This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package. This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.