CSD17570Q5B Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id
Texas Instruments CSD17570Q5B	30 V	100 A	13600 pF	N-Channel	121 nC	3.2 W	0.69 mOhm	-55 °C	150 °C	Surface Mount	20 V	8-VSON-CLIP (5x6)	8-PowerTDFN	4.5 V 10 V	MOSFET (Metal Oxide)	1.9 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm

Key Features

• Ultra-Low ResistanceLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic PackageUltra-Low ResistanceLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic Package

Description

This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications. This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.