CSD17576Q5B Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Technology
Texas Instruments CSD17576Q5BT	32 nC	4430 pF	8-VSONP (5x6)	2 mOhm	Surface Mount	8-PowerTDFN	4.5 V 10 V	1.8 V	100 A	-55 °C	150 °C	20 V	30 V	3.1 W 125 W	N-Channel	MOSFET (Metal Oxide)

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Key Features

• Low Qgand QgdLow RDS(on)Low Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageLow Qgand QgdLow RDS(on)Low Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 30 V, 1.7 mΩ, SON 5 x 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 30 V, 1.7 mΩ, SON 5 x 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.