CSD17556Q5B Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Part	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD17556Q5B	Surface Mount	1.65 V	8-VSON-CLIP (5x6)	N-Channel	8-PowerTDFN	20 V	3.1 W 191 W	MOSFET (Metal Oxide)	4.5 V 10 V	7020 pF	1.4 mOhm	34 A 100 A	30 V	39 nC	-55 °C	150 °C

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Key Features

• Extremely Low ResistanceUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageExtremely Low ResistanceUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.