CSD17308Q330-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm | Transistors | 1 | Active | This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. |
CSD17309Q330-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm | Single FETs, MOSFETs | 1 | Active | This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. |
CSD17313Q230-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm | Transistors | 2 | Active | This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package. |
| Transistors | 1 | Obsolete | This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package. |
CSD17318Q230-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm | FETs, MOSFETs | 2 | Active | This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.
This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package. |
CSD17322Q5A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.4 mOhm | FETs, MOSFETs | 1 | Active | The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. |
CSD17381F430-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection | Discrete Semiconductor Products | 1 | Active | This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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CSD17382F430-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection | Discrete Semiconductor Products | 1 | Active | This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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CSD17483F430-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection | Transistors | 1 | Active | This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. |
CSD17484F430-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection | Single FETs, MOSFETs | 2 | Active | This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. |
