CSD17483F4 Series

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Part	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Package / Case	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Texas Instruments CSD17483F4	N-Channel	30 V	3-PICOSTAR	MOSFET (Metal Oxide)	1.1 V	-55 °C	150 °C	240 mOhm	500 mW	3-XFDFN	12 V	1.3 nC	190 pF	1.5 A	1.8 V 4.5 V	Surface Mount

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Key Features

• Low on-resistanceLow Qgand QgdLow-threshold voltageUltra-small footprint (0402 case Size)1.0 mm × 0.6 mmUltra-low profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on-resistanceLow Qgand QgdLow-threshold voltageUltra-small footprint (0402 case Size)1.0 mm × 0.6 mmUltra-low profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.