CSD17381F4 Series

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Technology
Texas Instruments CSD17381F4	1.35 nC	30 V	N-Channel	109 mOhm	1.1 V	3-XFDFN	1.8 V 4.5 V	500 mW	-55 °C	150 °C	3-PICOSTAR	Surface Mount	195 pF	12 V	MOSFET (Metal Oxide)

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection

Key Features

• Ultra-low on-resistanceUltra-low Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profile0.36 mm heightIntegrated ESD protection diodeRated >4 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliantUltra-low on-resistanceUltra-low Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profile0.36 mm heightIntegrated ESD protection diodeRated >4 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliant

Description

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . . This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .