CSD17382F4 Series

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Vgs (Max) [Max]	Mounting Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD17382F4	1.8 V 8 V	64 mOhm	-55 °C	150 °C	3-PICOSTAR	30 V	1.2 V	3-XFDFN	2.7 nC	347 pF	N-Channel	MOSFET (Metal Oxide)	10 V	Surface Mount	500 mW	2.3 A

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection

Key Features

• Low on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profile0.36-mm heightIntegrated ESD protection diodeRated > 3-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profile0.36-mm heightIntegrated ESD protection diodeRated > 3-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . . This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .