CSD17484F4 Series

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection

Part	Vgs(th) (Max) @ Id	FET Type	Technology	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Texas Instruments CSD17484F4	1.1 V	N-Channel	MOSFET (Metal Oxide)	3-XFDFN	500 mW	-55 °C	150 °C	Surface Mount	121 mOhm	195 pF	30 V	1.8 V 8 V	12 V	3 A	2.04 nC	3-PICOSTAR
Texas Instruments CSD17484F4T	1.1 V	N-Channel	MOSFET (Metal Oxide)	3-XFDFN	500 mW	-55 °C	150 °C	Surface Mount	121 mOhm	195 pF	30 V	1.8 V 8 V	12 V	3 A	2.04 nC	3-PICOSTAR

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection

Key Features

• Low on-resistanceUltra-low Qgand QgdLow-threshold voltageUltra-small footprint (0402 Case Size)1.0 mm × 0.6 mmUltra-low profile0.2-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on-resistanceUltra-low Qgand QgdLow-threshold voltageUltra-small footprint (0402 Case Size)1.0 mm × 0.6 mmUltra-low profile0.2-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.