CSD17308Q3 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Texas Instruments CSD17308Q3T	Surface Mount	14 A 44 A	8 V	3 V	N-Channel	1.8 V	8-PowerTDFN	8-VSON-CLIP (3.3x3.3)	MOSFET (Metal Oxide)	700 pF	-55 °C	150 °C	10 V	-8 V	10.3 mOhm	2.7 W 28 W	30 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm

Key Features

• Optimized for 5-V gate driveUltra-low Qgand QgdLow thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantHalogen freeVSON 3.3 mm × 3.3 mm plastic packageOptimized for 5-V gate driveUltra-low Qgand QgdLow thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantHalogen freeVSON 3.3 mm × 3.3 mm plastic package

Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.