CSD17309Q3 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id
Texas Instruments CSD17309Q3	-55 °C	150 °C	MOSFET (Metal Oxide)	8-PowerTDFN	2.8 W	10 nC	Surface Mount	20 A 60 A	8-VSON-CLIP (3.3x3.3)	30 V	1440 pF	8 V	3 V	N-Channel	5.4 mOhm	10 V	-8 V	1.7 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm

Key Features

• Optimized for 5 V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint of Load Synchronous Buck inNetworking, Telecom, and ComputingSystemsNexFET Is a trademark of Texas InstrumentsOptimized for 5 V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint of Load Synchronous Buck inNetworking, Telecom, and ComputingSystemsNexFET Is a trademark of Texas Instruments

Description

This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.