CSD17318Q2 Series

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)
Texas Instruments CSD17318Q2T	25 A	879 pF	10 V	6-WSON (2x2)	MOSFET (Metal Oxide)	15.1 mOhm	6 nC	1.2 V	-55 °C	150 °C	Surface Mount	2.5 V	8 V	30 V	N-Channel	16 W
Texas Instruments CSD17318Q2	25 A	879 pF	10 V	6-WSON (2x2)	MOSFET (Metal Oxide)	15.1 mOhm	6 nC	1.2 V	-55 °C	150 °C	Surface Mount	2.5 V	8 V	30 V	N-Channel	16 W

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

Key Features

• Optimized for 5V gate driveLow capacitance and chargeLow RDS(ON)Low-thermal resistanceLead freeRoHS compliantHalogen freeSON 2mm × 2mm plastic packageOptimized for 5V gate driveLow capacitance and chargeLow RDS(ON)Low-thermal resistanceLead freeRoHS compliantHalogen freeSON 2mm × 2mm plastic package

Description

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package. This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.