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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDS8449_F085N-Channel PowerTrench<sup>®</sup> MOSFET 40V, 7.6A, 29mΩ	FETs, MOSFETs	1	Obsolete	These N-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
FDS86240N-Channel PowerTrench<sup>®</sup> MOSFET 150V, 7.5A, 19.8mΩ	Discrete Semiconductor Products	8	Active	This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.
FDS86267PP-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET -150V, -2.2A, 255mΩ	FETs, MOSFETs	1	Active	This P-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDS8672SN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 18A, 4.8mΩ	Transistors	2	Active	The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on)and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using a monolithic SyncFET technology.
FDS8813NZN-Channel PowerTrench<sup>®</sup> MOSFET 30V, 18.5A, 4.5mΩ	Transistors	1	LTB	This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDS8817NZN-Channel PowerTrench<sup>®</sup> MOSFET 30V, 15A, 7.0mΩ	Discrete Semiconductor Products	1	Obsolete	This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDS8842NZN-Channel PowerTrench<sup>®</sup> MOSFET 40V, 14.9A, 7.0mΩ	FETs, MOSFETs	1	Active	The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.
FDS8858CZDual N & P-Channel PowerTrench<sup>®</sup> MOSFET 30V	Discrete Semiconductor Products	1	Active	These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS8882N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 9A, 20.0mΩ	FETs, MOSFETs	1	Active	The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.
FDS8884N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 12.5A, 8.5mΩ	Single	8	Active	This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.