FDS8813NZ Series

N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor FDS8813NZ	30 V	4145 pF	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	N-Channel	3 V	76 nC	18.5 A	2.5 W	20 V	4.5 mOhm	-55 °C	150 °C	8-SOIC

Catalog

N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

Key Features

• Max rDS(on)= 4.5 mΩ at VGS= 10 V, ID= 18.5 A

• Max rDS(on)= 6.0 mΩ at VGS= 4.5 V, ID= 16 A

• HBM ESD protection level of 5.6kV typical (note 3)

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• RoHS compliant

Description

This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.