FDS86240 Series

N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ

Part	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS86540	Surface Mount	2.5 W 5 W	6410 pF	N-Channel	18 A	4.5 mOhm	4 V	8 V 10 V	-55 °C	150 °C	60 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	90 nC	8-SOIC
ON Semiconductor FDS86141	Surface Mount	2.5 W	934 pF	N-Channel	7 A	23 mOhm	4 V	6 V 10 V	-55 °C	150 °C	100 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	16.5 nC	8-SOIC
ON Semiconductor FDS8690	Surface Mount	2.5 W	1680 pF	N-Channel	14 A	7.6 mOhm	3 V	4.5 V 10 V	-55 °C	150 °C	30 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	27 nC	8-SOIC
ON Semiconductor FDS8670	Surface Mount	2.5 W	4040 pF	N-Channel	21 A		3 V	4.5 V 10 V	-55 °C	150 °C	30 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	82 nC	8-SOIC	3.7 mOhm
ON Semiconductor FDS86540	Surface Mount	2.5 W 5 W	6410 pF	N-Channel	18 A	4.5 mOhm	4 V	8 V 10 V	-55 °C	150 °C	60 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	90 nC	8-SOIC
ON Semiconductor FDS86240	Surface Mount	2.5 W 5 W	2570 pF	N-Channel	7.5 A	19.8 mOhm	4 V	6 V 10 V	-55 °C	150 °C	150 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	40 nC	8-SOIC
ON Semiconductor FDS86140	Surface Mount	2.5 W 5 W	2580 pF	N-Channel	11.2 A	9.8 mOhm	4 V	6 V 10 V	-55 °C	150 °C	100 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	41 nC	8-SOIC
ON Semiconductor FDS8638	Surface Mount	2.5 W	5680 pF	N-Channel	18 A	4.3 mOhm	3 V	4.5 V 10 V	-55 °C	150 °C	40 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	86 nC	8-SOIC

Catalog

N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ

Key Features

• Max rDS(on)= 19.8 mΩ at VGS= 10 V, ID= 7.5 A

• Max rDS(on)= 26 mΩ at VGS= 6 V, ID= 6.4 A

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power and Current Handling Capability in a Widely Used Surface Mount Package

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.