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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDT457NN-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ	Transistors	1	Active	These N-Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
FDT458PP-Channel PowerTrench<sup>®</sup> MOSFET,30V, -3.4A, 130mΩ	FETs, MOSFETs	1	Active	This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.
FDT459NN-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ	FETs, MOSFETs	2	Active	These N-Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
FDT55	Single FETs, MOSFETs	1	Obsolete
FDT86106LZN-Channel PowerTrench<sup>®</sup> MOSFET 100V, 3.2A, 108mΩ	Discrete Semiconductor Products	1	Active	This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
FDT86113LZN-Channel PowerTrench<sup>®</sup> MOSFET 100V, 3.3A, 100mΩ	Transistors	1	Active	This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
FDT86246LN-Channel PowerTrench<sup>®</sup> MOSFET 150V, 1.2A, 845mΩ	Transistors	3	Active	This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
FDU25	Discrete Semiconductor Products	2	Obsolete
FDU5N50NZTUPower MOSFET, N-Channel, UniFET<sup>TM</sup> II, 500 V, 4 A, 1.5 Ω, IPAK	FETs, MOSFETs	1	Obsolete	UniFETTMII MOSFET is ON Semiconductor Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDU6N25Power MOSFET, N-Channel, UniFET<sup>TM</sup>, 250 V, 4.4 A, 1.1 Ω, IPAK	Single FETs, MOSFETs	1	Active	UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.