FDS8842NZ Series

N-Channel PowerTrench® MOSFET 40V, 14.9A, 7.0mΩ

Catalog

N-Channel PowerTrench® MOSFET 40V, 14.9A, 7.0mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
ON Semiconductor FDS8842NZ	14.9 A	Surface Mount	-55 °C	150 °C	2.5 W	MOSFET (Metal Oxide)	3845 pF	3 V	N-Channel	7 mOhm	8-SOIC	3.9 mm	0.154 in	8-SOIC	20 V	73 nC	4.5 V 10 V	40 V

Catalog

N-Channel PowerTrench® MOSFET 40V, 14.9A, 7.0mΩ

Key Features

• Max rDS(on)= 7.0 mΩ at VGS= 10 V, ID= 14.9 A

• Max rDS(on)= 11.6 mΩ at VGS= 4.5 V, ID= 11.6 A

• HBM ESD protection level of 4.4 kV typical(note 3)

• High performance trench technology for extremely low rDS(on)and fast switching

• High power and current handling capability

• Termination is Lead-free and RoHS Compliant

Description

The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.