FDS8882 Series

N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [x]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor FDS8882	30 V	20 nC	9 A	4.5 V 10 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	N-Channel	-55 °C	150 °C	2.5 W	8-SOIC	20 V	20 mOhm	940 pF	3 V	Surface Mount

Catalog

N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

Key Features

• Max rDS(on)= 20.0 mΩ at VGS= 10 V, ID= 9 A

• Max rDS(on)= 22.5 mΩ at VGS= 4.5 V, ID= 8 A

• High performance trench technology for extremely low rDS(on)and fast switching

• High power and current handling capability

• Termination is Lead-free and RoHS Compliant

Description

The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.