FDS8884 Series

N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDS8876	8.2 mOhm	12.5 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	1650 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W	36 nC	20 V	2.5 V
ON Semiconductor FDS8880	10 mOhm	11.6 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	1235 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W	30 nC	20 V	2.5 V
ON Semiconductor FDS8878	14 mOhm	10.2 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	897 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W		20 V	2.5 V	26 nC
ON Semiconductor FDS8896	6 mOhm	15 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	2525 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W		20 V	2.5 V
ON Semiconductor FDS8878	14 mOhm	10.2 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	897 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W		20 V	2.5 V	26 nC
ON Semiconductor FDS8876-F40	8.2 mOhm	12.5 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	1650 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W	36 nC	20 V	2.5 V
ON Semiconductor FDS8812NZ	4 mOhm	20 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	6925 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W	126 nC	20 V	3 V
ON Semiconductor FDS8884	23 mOhm	8.5 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	4.5 V 10 V	30 V	635 pF	Surface Mount	N-Channel	MOSFET (Metal Oxide)	2.5 W		20 V	2.5 V	13 nC

Catalog

N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ

Key Features

• RDS(ON)= 8.2 mΩ @ VGS= 10V @ ID= 12.5A

• RDS(ON)= 10.2 mΩ @ VGS= 4.5 V @ ID= 11.4 A

• High performance trench technology for extremely low rDS(ON)

• Low gate charge

• High power and current handling capability

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.